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PD - 91260E
HEXFET(R) Power MOSFET
l l l l l l l
IRLML5103
VDSS = -30V
Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching
D
G S
RDS(on) = 0.60
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
Micro3
Absolute Maximum Ratings
Parameter
I D @ TA = 25C I D @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
-0.76 -0.61 -4.8 540 4.3 20 -5.0 -55 to + 150
Units
A mW
mW/C
V V/ns C
Thermal Resistance
RJA Maximum Junction-to-Ambient
Parameter
Typ.
Max.
230
Units
C/W
04/29/03
IRLML5103
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) VGS(th) g fs IDSS I GSS Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss C rss
Min. -30 -1.0 0.44
Typ. -0.029 3.4 0.52 1.1 10 8.2 23 16 75 37 18
Max. Units Conditions V VGS = 0V, ID = -250A V/C Reference to 25C, ID = -1mA 0.60 VGS = -10V, ID = -0.60A 1.0 VGS = -4.5V, I D = -0.30A V VDS = VGS, I D = -250A S VDS = -10V, ID = -0.30A -1.0 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, TJ = 125C -100 VGS = -20V nA 100 VGS = 20V 5.1 ID = -0.60A 0.78 nC VDS = -24V 1.7 VGS = -10V, See Fig. 6 and 9 VDD = -15V ID = -0.60A ns RG = 6.2 RD = 25, See Fig. 10 VGS = 0V pF VDS = -25V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
VSD t rr Q rr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units -0.54 26 20 -4.8 -1.2 39 30 V ns nC A
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -0.60A, VGS = 0V TJ = 25C, IF = -0.60A di/dt = 100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%.
ISD -0.60A, di/dt 110A/s, VDD V(BR)DSS, Surface mounted on FR-4 board, t 5sec.
TJ 150C
IRLML5103
10
VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP
10
-I D , Drain-to-Source Current (A)
1
-I D , Drain-to-Source Current (A)
VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP
1
-3.0V 20s PULSE WIDTH TJ = 25C A
0.1 1 10
-3.0V
0.1
0.1 0.1 1
20s PULSE WIDTH TJ = 150C A
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.0
TJ = 25C TJ = 150C
1
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = -0.60A
-ID , Drain-to-Source Current (A)
1.5
1.0
0.5
0.1 3.0 4.0 5.0
VDS = -10V 20s PULSE WIDTH
6.0 7.0 8.0
A
0.0 -60 -40 -20 0 20 40 60 80
VGS = -10V
100 120 140 160
A
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRLML5103
140
120
-VGS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd Ciss C oss = C ds + C gd
20
I D = -0.60A VDS = -24V VDS = -15V
16
C, Capacitance (pF)
100
Coss
80
12
60
Crss
40
8
4
20
0 1 10 100
A
0 0.0
FOR TEST CIRCUIT SEE FIGURE 9
1.0 2.0 3.0 4.0
A
5.0
-VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
10
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
-I D , Drain Current (A)
TJ = 150C
1
100s 1
TJ = 25C
1ms
0.1 0.4 0.6 0.8 1.0 1.2
VGS = 0V
1.4
A
0.1 1
TA = 25C TJ = 150C Single Pulse
10
10ms
1.6
A
100
-VSD , Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRLML5103
QG
VDS V GS
RD
-10V
VG
QGS
QGD
-10V
Charge
Pulse Width 1 s Duty Factor 0.1 %
Fig 9a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
Fig 10a. Switching Time Test Circuit
50K 12V .2F .3F
VDS 90%
VDS
VGS
-3mA
IG
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
1000
Thermal Response (Z thJA )
100
D = 0.50 0.20 0.10
10
0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100
1
0.1 0.00001
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
+
D.U.T.
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
t1 , Rectangular Pulse Duration (sec)
+
-
RG
D.U.T. VDD
IRLML5103
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG VGS*
**
* dv/dt controlled by RG * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ -
VDD
*
* Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.W. Period D= P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS
IRLML5103
Package Outline
SOT-23 Outline Dimensions are shown in millimeters (inches)
D -B3
LEAD ASSIGNMENTS 1 - GATE 2 - SOURCE 3 - DRAIN
H 2 0.20 ( .008 ) M AM
DIM A A1 B C D e e1 E
INCHES MIN .032 .001 .015 .004 .105 MAX .044 .004 .021 .006 .120
MILLIMETERS MIN 0.82 0.02 0.38 0.10 2.67 MAX 1.11 0.10 0.54 0.15 3.05
3
E -A-
3 1
.0750 BASIC .0375 BASIC .047 .083 .005 0 .055 .098 .010 8
1.90 BASIC 0.95 BASIC 1.20 2.10 0.13 0 1.40 2.50 0.25 8
e e1 0.008 (.003) L 3X C 3X
H L A
MINIMUM RECOMMENDED FOOTPRINT -CB 3X 0.10 (.004) M A1 C AS B S 0.80 ( .031 ) 3X 0.90 ( .035 ) 3X 2.00 ( .079 )
NOTES: 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.
0.95 ( .037 ) 2X
IRLML5103
Part Marking Information
SOT-23
Notes : T his part marking information applies to devices produced before 02/26/2001
EXAMPLE: T HIS IS AN IRLML6302 WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR PART NUMBER 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D
DATE CODE
PART NUMBER CODE REFERENCE: 1A = 1B = 1C = 1D = 1E = 1F = 1G = 1H = IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203
24 25 26
X Y Z
WW = (27-52) IF PRECEDED BY A LETT ER YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D
DAT E CODE EXAMPLES: YWW = 9503 = 5C YWW = 9532 = EF
50 51 52
X Y Z
Notes : T his part marking information applies to devices produced after 02/26/2001
W = (1-26) IF PRECE DED BY LAS T DIGIT OF CALENDAR YEAR Y = YEAR W = WEEK YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D
PART NUMBER
LOT CODE
PART NUMBER CODE REFERENCE: A= B= C= D= E= F= G= H= IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203
24 25 26
X Y Z
W = (27-52) IF PRECEDED BY A LETTER YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D
50 51 52
X Y Z
IRLML5103
Tape & Reel Information
SOT-23 Dimensions are shown in millimeters (inches)
2.05 ( .080 ) 1.95 ( .077 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.32 ( .051 ) 1.12 ( .045 )
1.85 ( .072 ) 1.65 ( .065 )
TR
3.55 ( .139 ) 3.45 ( .136 )
8.3 ( .326 ) 7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 ) 3.9 ( .154 )
1.1 ( .043 ) 0.9 ( .036 )
0.35 ( .013 ) 0.25 ( .010 )
178.00 ( 7.008 ) MAX.
9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/03

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